Electron-hole asymmetry and band gaps of commensurate double moire patterns in twisted bilayer graphene on hexagonal boron nitride

نویسندگان

چکیده

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show that tBG/BN commensurate patterns can be classified into two types, each favoring narrowing either conduction or valence bands average, obtain evolution as a function interlayer sliding vectors electric fields. Finite valley Chern numbers $\pm 1$ are found wide range parameter space when isolated through gaps, while local density states associated to flat weakly affected by BN invariably concentrating around AA-stacked regions tBG. We illustrate impact for particularly pronounced electron-hole asymmetric band calculating optical conductivities near magic angle carrier density. The structures corresponding other $N$-multiple period ratios indicate it is possible achieve narrow width $W \lesssim 30$ meV folded bundles tBG angles $\theta 1^{\circ}$.

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ژورنال

عنوان ژورنال: Physical review

سال: 2021

ISSN: ['0556-2813', '1538-4497', '1089-490X']

DOI: https://doi.org/10.1103/physrevb.103.075423